Presentation
1 April 2022 What limits the voltage of polycrystalline CdSeTe solar cells? Insights from spectrally resolved and quantitative photoluminescence
Author Affiliations +
Abstract
In this contribution, we use spectrally resolved and quantitative photoluminescence measurements to parse voltage losses in CdSeTe films and finished devices. We show that sub-bandgap features, in part due to arsenic doping, are responsible for a significant decrease in the thermodynamic voltage limit Voc,ideal. Nevertheless, thanks to excellent material quality and interface passivation, the internal voltage iVoc (i.e., quasi-Fermi-level splitting with QFLS=q×iVoc) of finished devices approaches 1000 mV, in agreement with the high minority-carrier lifetimes measured. The selectivity of the device, and in particular of the back hole contact, is thus the main limitation in these devices.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arthur L. Onno, Carey L. Reich, Siming Li, Adam Danielson, William Weigand, Alexandra Bothwell, Sachit Grover, Jeff Bailey, Gang Xiong, Darius Kuciauskas, Walajabad Sampath, and Zachary C. Holman "What limits the voltage of polycrystalline CdSeTe solar cells? Insights from spectrally resolved and quantitative photoluminescence", Proc. SPIE PC11996, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, PC1199604 (1 April 2022); https://doi.org/10.1117/12.2612237
Advertisement
Advertisement
KEYWORDS
Solar cells

Luminescence

Arsenic

Cadmium

Doping

Interfaces

Thermodynamics

RELATED CONTENT

Investigation of carrier removal from QD TJSCs
Proceedings of SPIE (March 25 2013)
A scaling law for the time derivative of TR PL...
Proceedings of SPIE (January 01 1900)
MBE Of ZnSe On GaAs Epilayers
Proceedings of SPIE (April 20 1987)
Infrared photoluminescence characterization of HgCdTe film
Proceedings of SPIE (November 29 2000)

Back to Top