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5 March 2022 Ultrafast carrier dynamics in β-Ga2O3
Saulius Marcinkevicius, James S. Speck
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Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC1200203 (2022) https://doi.org/10.1117/12.2608485
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Ultrafast pump-probe spectroscopy was applied to measure several fundamental material parameters in β-Ga2O3. These include times for the hole self-trapping into a polaron state, electron-phonon scattering, and energy of the lowest conduction band side valley. These different parameters were assessed by using spectrally tuneable pump and probe pulses at proper wavelengths. The obtained 300 K scattering times are 0.5 ps for the hole self-trapping, 4.5 fs for the electron-polar optical phonon scattering, and 80 fs for scattering to and from the side valley. The energy of the lowest side valley in the conduction band is 2.6 eV.
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Saulius Marcinkevicius and James S. Speck "Ultrafast carrier dynamics in β-Ga2O3", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC1200203 (5 March 2022); https://doi.org/10.1117/12.2608485
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KEYWORDS
Scattering
Carrier dynamics
Ultrafast phenomena
Crystals
Phonons
Picosecond phenomena
Reflectance spectroscopy
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