We propose a novel exchange correlation potential[1] for DFT investigations of semiconductor materials,
based on physical properties of the underlying microscopic screening.
We demonstrate that it reproduces the low temperature band gap of several materials. Moreover, on the example of defects in semiconductors, it respects the required linearity condition of the total energy
with the fractional occupation number, as expressed by the generalized Koopman’s theorem. It is shown, that alloys can be treated with a common choice of the functional. We also show that this novel functional can be used as a kernel in linear response TDDFT to reproduce excitonic effects in optical spectra.
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