Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator

Patrick L. Theofanis; Oleg Tazetdinov

doi:10.1117/12.2617292

13 June 2022 Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator

Patrick L. Theofanis, Oleg Tazetdinov

Proceedings Volume PC12051, Optical and EUV Nanolithography XXXV; PC120510I (2022) https://doi.org/10.1117/12.2617292
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

We introduce and demonstrate a new simulator that utilizes resist-specific chemical formulations to drive a Monte Carlo multi-physics and chemistry modeling flow for NA 0.33 and NA 0.55 EUV lithography. With this model stochastic variations are a natural consequence of the chemical and atomic composition of the material. Fully predictive EUV absorption coefficients and exposure latitudes have less than 5% error. LCDU values are predicted with errors smaller than 15% and LWR/LER values are predicted with errors smaller than 7%. We believe chemistry-focused simulations will be key to the development of new EUV photoresists tailored to high-NA imaging.

Conference Presentation

Citation Download Citation

Patrick L. Theofanis and Oleg Tazetdinov "Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC120510I (13 June 2022); https://doi.org/10.1117/12.2617292

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