Room temperature resonant tunneling behavior observed in layered GeS/BP transistors

Moh Amer

doi:10.1117/12.2633970

3 October 2022 Room temperature resonant tunneling behavior observed in layered GeS/BP transistors

Moh Amer

Proceedings Volume PC12200, Low-Dimensional Materials and Devices 2022; PC122000H (2022) https://doi.org/10.1117/12.2633970
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Abstract

This conference presentation was prepared for the Low-Dimensional Materials and Devices 2022 conference at SPIE Optics + Photonics 2022.

Conference Presentation

Citation Download Citation

Moh Amer "Room temperature resonant tunneling behavior observed in layered GeS/BP transistors", Proc. SPIE PC12200, Low-Dimensional Materials and Devices 2022, PC122000H (3 October 2022); https://doi.org/10.1117/12.2633970

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