Poster
31 May 2023 Valley selective routing of interlayer excitons in two-dimensional semiconductor heterostructures via microresonators
Author Affiliations +
Conference Poster
Abstract
The presence of a vertical component to the transition dipole moment in interlayer excitons, which suppresses electron-hole overlap, results in longer radiative lifetimes as compared to intralayer excitons. Such tightly bound interlayer excitons well-suited candidates for valley-based quantum information processing applications. Their optical accessibility is, however, limited due to their out-of-plane transition dipole moment. We first design a system to strengthen the coupling of interlayer excitons in two-dimensional (2D) material heterostructures with Purcell enhanced out-of-plane resonant modes of a Whispering Gallery Mode (WGM) resonator at room temperature. The high quantum confinement of light in a small modal volume and high Q-factor allow a much stronger coupling of these excitons to the electromagnetic field. We then discuss how to engineer an asymmetric transmission of light from these excitons, which facilitates readout from such systems. We also present our attempts to experimentally demonstrate the valley selective separation and routing of interlayer excitons in the MoSe2/WSe2 heterobilayer stack of TMDCs material by integrating on a planar silicon nitride (SiN) bus-waveguide coupled with a microring resonator (MRR).
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kishor Kumar Mandal, Anuj Kumar Singh, Brijesh Kumar, and Anshuman Kumar "Valley selective routing of interlayer excitons in two-dimensional semiconductor heterostructures via microresonators", Proc. SPIE PC12575, Integrated Optics: Design, Devices, Systems and Applications VII, PC125750H (31 May 2023); https://doi.org/10.1117/12.2665670
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KEYWORDS
Excitons

Heterojunctions

Microresonators

Semiconductors

Silicon

Microrings

Photonic devices

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