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12 March 2024 GaAsSb-(InAlGa)As core-multishell nanowire lasers on silicon
Paul Schmiedeke, Cem Doganlar, Marc-Aurel Meinhold-Heerlein, Andreas Thurn, Jonathan Finley, Gregor Koblmüller
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Proceedings Volume PC12880, Physics and Simulation of Optoelectronic Devices XXXII; PC128800A (2024) https://doi.org/10.1117/12.3001120
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We demonstrate a new generation of composition-tuned, ternary GaAsSb nanowire lasers on silicon with emission wavelengths tuned to below the Si bandgap. By solving previous limitations in the growth of III-As-Sb based nanowires, resonator cavities with extended lengths > 7 µm and high Sb-content (~30%) are realized as a base for bulk-type or quantum-well based nanowire lasers. Bulk GaAsSb nanowire lasers with high radiative efficiency and low threshold are enabled by use of lattice-matched InAlGaAs surface passivation layers. Coaxial InGaAs multi-quantum well (MQW) active regions grown on GaAsSb nanowire templates open further scope of tailoring material gain and lasing wavelength.
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Paul Schmiedeke, Cem Doganlar, Marc-Aurel Meinhold-Heerlein, Andreas Thurn, Jonathan Finley, and Gregor Koblmüller "GaAsSb-(InAlGa)As core-multishell nanowire lasers on silicon", Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC128800A (12 March 2024); https://doi.org/10.1117/12.3001120
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KEYWORDS
Nanowires
Silicon
Laser resonators
Semiconductor lasers
Indium gallium arsenide
Light sources
Molecular beam epitaxy
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