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12 March 2024 Radiation resilient quantum dot semiconductor lasers
Seth A. Fortuna, Weng W. Chow, Gyorgy Vizkelethy, Eamonn T. Hughes, John E. Bowers, Erik J. Skogen
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Proceedings Volume PC12880, Physics and Simulation of Optoelectronic Devices XXXII; PC128800E (2024) https://doi.org/10.1117/12.2692938
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Quantum dot lasers are expected to have excellent radiation hardness since carriers are spatially localized within the quantum dots and unable to move freely in-plane and interact with radiation-induced defects. Indeed, early experimental observations of reduced threshold current increase in quantum dot lasers with respect to quantum well lasers grown on native substrates were reported for heavy ion and proton environments. We recently observed the robustness of InAs quantum dot lasers grown on silicon and irradiated in neutron environments thus demonstrating radiation hardness also extends to quantum dot lasers grown on non-native substrates. We will discuss our experimental work and modeling effort to understand how the electronic structure of the quantum dot system impacts radiation hardness.
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Seth A. Fortuna, Weng W. Chow, Gyorgy Vizkelethy, Eamonn T. Hughes, John E. Bowers, and Erik J. Skogen "Radiation resilient quantum dot semiconductor lasers", Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC128800E (12 March 2024); https://doi.org/10.1117/12.2692938
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KEYWORDS
Laser radiation
Ionizing radiation
Quantum dot lasers
Semiconductor lasers
Semiconductor quantum dots
Laser damage threshold
Reliability
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