Structural and optical analysis of Bi2Se3 thin-films laterally grown on patterned sapphire substrates

Jong-Kwon Lee; Deuk Young Kim; Hak Dong Cho

doi:10.1117/12.3002369

12 March 2024 Structural and optical analysis of Bi₂Se₃ thin-films laterally grown on patterned sapphire substrates

Jong-Kwon Lee, Deuk Young Kim, Hak Dong Cho

Proceedings Volume PC12880, Physics and Simulation of Optoelectronic Devices XXXII; PC128800M (2024) https://doi.org/10.1117/12.3002369
Event: SPIE OPTO, 2024, San Francisco, California, United States

Conference Poster

Abstract

High-quality Bi₂Se₃ thin-films laterally grown on a patterned sapphire substrate (PSS) have been developed using a catalyst-free vapor-phase transport deposition. Here, the structural properties of Bi₂Se₃ thin-films are greatly improved by covering the surface with Bi metal having a relatively low vaporization rate. Thus, the photoresponse of the fabricated IR conversion device using the Bi₂Se₃/PSS heterostrucutre exhibits excellent performance and high reliability with no degradation after continuous switching. Also, the Bi₂Se₃/PSS reveals a significantly higher near IR induced-photocurrent and a much faster photo-switching than the Bi₂Se₃ on a planar sapphire substrate.

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Jong-Kwon Lee, Deuk Young Kim, and Hak Dong Cho "Structural and optical analysis of Bi₂Se₃ thin-films laterally grown on patterned sapphire substrates", Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC128800M (12 March 2024); https://doi.org/10.1117/12.3002369

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