Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions

Tetsuo Narita; Masakazu Kanechika; Kazuyoshi Tomita; Yoshitaka Nagasato; Takeshi Kondo; Tsutomu Uesugi; Satoshi Ikeda; Masayoshi Kosaki; Tohru Oka; Jun Suda

doi:10.1117/12.2691563

9 March 2024 Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions

Tetsuo Narita, Masakazu Kanechika, Kazuyoshi Tomita, Yoshitaka Nagasato, Takeshi Kondo, Tsutomu Uesugi, Satoshi Ikeda, Masayoshi Kosaki, Tohru Oka, Jun Suda

Author Affiliations +

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860A (2024) https://doi.org/10.1117/12.2691563
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Proton irradiation-induced point defects acting as Shockley-Read-Hall (SRH) recombination centers in homoepitaxial GaN p-n junctions were characterized based on analyses of recombination current. Positron annihilation spectroscopy (PAS) data indicated that the vacancies in the GaN specimens comprised Ga vacancies and divacancies. The SRH lifetimes were decreased with the increase of the 4.2 MeV proton dose. For the same dose, the carrier concentrations and the SRH lifetimes for p-/n+ junctions were significantly reduced compared with those for p+/n- junction. The results suggest the asymmetry of defect formation in GaN based on the fact that intrinsic point defects in p-type GaN readily compensate for holes. The authors thank Mr. Takahide Yagi and Mr. Joji Ito of SHIATEX Co., Ltd., for performing proton irradiation and irradiation simulations. The authors thank Dr. Akira Uedono of Tsukuba Materials Research Co., Ltd., who is also a professor at the University of Tsukuba, for assisting in the assessment of vacancy types using PAS.The authors thank C-TEFs at Nagoya University for fabricating the devices used in this work.

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Tetsuo Narita, Masakazu Kanechika, Kazuyoshi Tomita, Yoshitaka Nagasato, Takeshi Kondo, Tsutomu Uesugi, Satoshi Ikeda, Masayoshi Kosaki, Tohru Oka, and Jun Suda "Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860A (9 March 2024); https://doi.org/10.1117/12.2691563

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KEYWORDS

Gallium nitride

Chemical species

Doping

Hydrogen

Picosecond phenomena

Anodes

Contour extraction

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