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13 March 2024 µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range
Heidi Tuorila, Jukka Viheriälä, Yeasir Arafat, Eero Koivusalo, Joonas Hilska, Fatih Atar, Fatima Gunning, Brian Corbett, Mircea Guina
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Proceedings Volume PC12891, Silicon Photonics XIX; PC1289106 (2024) https://doi.org/10.1117/12.3002486
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We present a GaSb based micro transfer printed (µTP) gain devices for integration with a 3 µm silicon-on-insulator platform and demonstrate integration to a reflective distributed Bragg reflector (DBR) forming a functional single frequency external cavity laser at 1960 nm. Previously used on InP and GaAs, we transferred the technique on GaSb, that allows the expansion of applications from telecommunication to sensing, such as environmental gas detection. In addition, we introduce a test device series and a methodology to measure and analyze the effects µTP design specific features, such as etched facets, to assess the transfer print process quality.
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Heidi Tuorila, Jukka Viheriälä, Yeasir Arafat, Eero Koivusalo, Joonas Hilska, Fatih Atar, Fatima Gunning, Brian Corbett, and Mircea Guina "µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range", Proc. SPIE PC12891, Silicon Photonics XIX, PC1289106 (13 March 2024); https://doi.org/10.1117/12.3002486
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KEYWORDS
Gallium antimonide
Printing
Silicon
Semiconductor lasers
Semiconducting wafers
Gallium arsenide
Laser frequency
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