We report on the results of an experiment to determine the effects of radiation damage caused by high-energy protons on an x-ray hybrid CMOS detector. This detector was utilized in a previous proton radiation experiment, which delivered a total dose to a selected region of ∼3  krad (Si). With updated hardware and experimental procedures, we further irradiated the detector with 7-MeV protons, delivering an additional 1.5 krad (Si) (2.78  ×  10⁹  protons  /  cm² 10 MeV equivalent) with increased uniformity to an overlapping region. The effects of this radiation on several important detector characteristics were analyzed after delivering doses of 0.5 and 1.0 krad. After 16 h of annealing at room temperature, detector performance was found to be unchanged in both cases.