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4 November 2022 Process window improvement for fin cut layer in self-aligned double-patterning process based on backscattered electron imaging
Yu Zhang, David Wei Zhang, Yuyang Bian, Biqiu Liu, Cong Zhang, Jun Huang, Jiawang Song, Yang Gao, Qiang Zhou, Wei Chen, Siqun Xiao, Shmuel Ben Nissim, Kevin Houchens, Omri Baum, Amit Zakay, Tal Ayzik, Yaniv Abramovitz
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Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 21, Issue 4, 041605 (November 2022). https://doi.org/10.1117/1.JMM.21.4.041605
Abstract

Background

The self-aligned double-patterning (SADP) process is being used extensively to overcome the lithographic resolution limit in the manufacture of integrated circuits. One use case is fin definition in a fin field-effect transistor. Fin cut layers are applied to modify the fins to the requirements of the device designs.

Aim

The traditional secondary electron (SE) imaging exhibits a disadvantage in the process controlling the fin cut layers, and fin damage defects were observed. This work aims to improve the monitoring and controlling capabilities for the process quality of fin cut layers.

Approach

A specially designed fin cut process flow and a backscattered electron (BSE) imaging technique are applied to check the process quality. The patterns formed through the fin cut etch and the fin structures are identified and measured simultaneously in one BSE image.

Results

By measuring the edge-to-edge distance, pitch walking (PW) of fins, and overlay (OV), the root cause of the fin damage is revealed. The linear fitting model and third-order fitting model are applied to reduce the edge placement error (EPE). The edge distance protecting the “at risk” fin is enlarged from 5.6 to 11.6 nm. The range of the distance is reduced from 11.6 to 8.1 nm, and the improvement in standard deviation is about 33%.

Conclusions

This work shows the capability of the BSE imaging technique in the characterization of fin cut layers and the potential in process window improvement restricted to fin damage defects.
© 2022 Society of Photo-Optical Instrumentation Engineers (SPIE)
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Yu Zhang, David Wei Zhang, Yuyang Bian, Biqiu Liu, Cong Zhang, Jun Huang, Jiawang Song, Yang Gao, Qiang Zhou, Wei Chen, Siqun Xiao, Shmuel Ben Nissim, Kevin Houchens, Omri Baum, Amit Zakay, Tal Ayzik, and Yaniv Abramovitz "Process window improvement for fin cut layer in self-aligned double-patterning process based on backscattered electron imaging," Journal of Micro/Nanopatterning, Materials, and Metrology 21(4), 041605 (4 November 2022). https://doi.org/10.1117/1.JMM.21.4.041605
Received: 27 May 2022; Accepted: 5 October 2022; Published: 4 November 2022
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KEYWORDS
Etching
System on a chip
Image processing
Sensors
Lithography
Distance measurement
Semiconducting wafers
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