30 May 2024 Maximizing image contrast in printing dense lines-and-spaces patterns
Anthony Yen, Weimin Gao
Author Affiliations +
Abstract

Elementary analysis shows that maximizing the aerial-image contrast in printing dense lines and spaces leads to a monotonically increasing relationship between (1n) and κ, where n and κ are real and imaginary parts of the refractive index of the absorber material of the photomask, respectively, and this relationship is affected by the space-to-pitch ratio in the mask absorber. For the tantalum boron nitride mask absorber presently in use, improvement in image contrast can be made by displacing the illuminating dipoles away from their nominal positions in conjunction with a focus offset.

© 2024 Society of Photo-Optical Instrumentation Engineers (SPIE)
Anthony Yen and Weimin Gao "Maximizing image contrast in printing dense lines-and-spaces patterns," Journal of Micro/Nanopatterning, Materials, and Metrology 23(2), 020501 (30 May 2024). https://doi.org/10.1117/1.JMM.23.2.020501
Received: 11 March 2024; Accepted: 17 May 2024; Published: 30 May 2024
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KEYWORDS
Light sources and illumination

Printing

Refractive index

Semiconducting wafers

Boron nitride

Image analysis

Photomasks

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