Fast-response photoconductive metal-semiconductor-metal ultraviolet detector based on ZnO film grown by radio-frequency magnetron sputtering

Xuming Bian; Jingwen Zhang; Zhen Bi; Dong Wang; Xin'an Zhang; Xun Hou

doi:10.1117/1.2939091

1 June 2008 Fast-response photoconductive metal-semiconductor-metal ultraviolet detector based on ZnO film grown by radio-frequency magnetron sputtering

Xuming Bian, Jingwen Zhang, Zhen Bi, Dong Wang, Xin'an Zhang, Xun Hou

Author Affiliations +

Optical Engineering, Vol. 47, Issue 6, 064001 (June 2008). https://doi.org/10.1117/1.2939091

Abstract

ZnO thin films were grown on SiO₂/Si substrates by radio-frequency magnetron sputtering. Based on the ZnO film, a photoconductive metal-semiconductor-metal ultraviolet detector was fabricated by a liftoff technique. Its I-V characteristics were observed at 365 nm, and a fast response was observed by illumination with a KrF excimer laser.

©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Xuming Bian, Jingwen Zhang, Zhen Bi, Dong Wang, Xin'an Zhang, and Xun Hou "Fast-response photoconductive metal-semiconductor-metal ultraviolet detector based on ZnO film grown by radio-frequency magnetron sputtering," Optical Engineering 47(6), 064001 (1 June 2008). https://doi.org/10.1117/1.2939091

Published: 1 June 2008

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