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29 May 2019 Broadband photoresponse of graphene photodetector from visible to long-wavelength infrared wavelengths
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Abstract
Graphene-based transistors were investigated as simple photodetectors for a broad range of wavelengths. Graphene transistors were prepared using p-doped silicon (Si) substrates with a SiO2 layer, and source and drain electrodes. Monolayer graphene was fabricated by chemical vapor deposition and transferred onto the substrates, and the graphene channel region was then formed. The photoresponse was measured in the broadband wavelength range from the visible, near-infrared (NIR), and mid- to long-wavelength IR (MWIR to LWIR) regions. The photoresponse was enhanced by the photogating induced by the Si substrate at visible wavelengths. Enhancement by the thermal effect of the insulator layer became dominant in the LWIR region, which indicates that the photoresponse of graphene-based transistors can be controlled by the surrounding materials, depending on the operation wavelength. These results are expected to contribute to provide the key mechanism of high-performance graphene-based photodetectors.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Shinpei Ogawa, Masaaki Shimatani, Shoichiro Fukushima, Satoshi Okuda, Yasushi Kanai , Takao Ono, and Kazuhiko Matsumoto "Broadband photoresponse of graphene photodetector from visible to long-wavelength infrared wavelengths," Optical Engineering 58(5), 057106 (29 May 2019). https://doi.org/10.1117/1.OE.58.5.057106
Received: 27 February 2019; Accepted: 8 May 2019; Published: 29 May 2019
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CITATIONS
Cited by 21 scholarly publications and 1 patent.
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KEYWORDS
Graphene

Photodetectors

Long wavelength infrared

Silicon

Mid-IR

Visible radiation

Transistors

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