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To validate the features applied for the new 2 nm Nylon filter, on-wafer tests are conducted in comparison to conventional product such as 5 nm Nylon filter. Filter start up performance is tested with KLA Tencor Surfscan SP5XP inspection on solvent spin coated Si wafer. For bridge defects, 40 nm half pitch after development pattern defectivity with ArF immersion lithography is tested. The new 2 nm rated Nylon 6,6 filter performed best for all the tests. Cleanliness probably played a role in start-up performance. Sieving, which is related to filter pore size was effective in resist coating defectivity. And both the finer pore size and hydrophilic adsorption are effective in after development inspection at 40 nm half pitch L/S pattern, which is nearly the theoretical limit of the ArF immersion lithography. |
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