Charge dissipation by use of a novel aqueous based quaternary ammonium compound for use in electron beam lithography on non-conductive substrates

Gerald Lopez; Glen de Villafranca; Grant Shao; Meiyue Zhang; Andrew Thompson

doi:10.1117/12.2524294

25 March 2019 Charge dissipation by use of a novel aqueous based quaternary ammonium compound for use in electron beam lithography on non-conductive substrates

Gerald Lopez, Glen de Villafranca, Grant Shao, Meiyue Zhang, Andrew Thompson

Author Affiliations +

Proceedings Volume 10960, Advances in Patterning Materials and Processes XXXVI; 1096027 (2019) https://doi.org/10.1117/12.2524294
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Electronic beam lithography (EBL) is commonly used for patterning at the nanoscale by way of a focused electron beam. This process can lead to charge accumulation on the surface of the resist when used in conjunction with non-conductive substrate materials, impacting lithographic quality producing egregious shape placement inaccuracies. Current practice requires the use of a deposited metal or conductive polymer film to facilitate charge dissipation at the surface. Such films are often unstable, incompatible and/or can be difficult to remove after exposure. This paper presents the findings of a study of a novel aqueous based quaternary ammonium compound for use in EBL for charge dissipation on non-conductive substrates. This compound was found to effectively prevent charge accumulations across a broad range of resist materials while remaining highly stable at room temperature and easily removed with deionized water or isopropanol after EBL exposure.

Citation Download Citation

Gerald Lopez, Glen de Villafranca, Grant Shao, Meiyue Zhang, and Andrew Thompson "Charge dissipation by use of a novel aqueous based quaternary ammonium compound for use in electron beam lithography on non-conductive substrates", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 1096027 (25 March 2019); https://doi.org/10.1117/12.2524294

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