AlN/[beta]-Ga2O3-based HEMT for high-power devices (Conference Presentation)

Yi Lu; Hsin-Hung Yao; Xiaohang Li

doi:10.1117/12.2545370

10 March 2020 AlN/β-Ga₂O₃-based HEMT for high-power devices (Conference Presentation)

Yi Lu, Hsin-Hung Yao, Xiaohang Li

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810M (2020) https://doi.org/10.1117/12.2545370
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

In this work, the heterostructures of III-N materials/β-Ga2O3 based on the modern polarization theory and band alignment are systematically investigated. The nitrogen (N)-polar AlN/β-Ga2O3 heterojunction is found that can form the triangle channel and hold large 2DEG density on the interface through polarization engineering. Compared with GaN-based HEMT, the proposed N-polar AlN/β-Ga2O3 HEMT with polarization-induced property can realize much larger 2DEG density, better DC and transconductance performance, as well as higher breakdown voltage.

Conference Presentation

Citation Download Citation

Yi Lu, Hsin-Hung Yao, and Xiaohang Li "AlN/β-Ga₂O₃-based HEMT for high-power devices (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810M (10 March 2020); https://doi.org/10.1117/12.2545370

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