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23 March 2020 Fundamental study on lithographic characteristics of metal oxo clusters for KrF, ArF, and electron beam lithography
Hiroki Yamamoto, Yasunari Maekawa
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Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 113261W (2020) https://doi.org/10.1117/12.2565717
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States
Abstract
Some hybrid inorganic-organic resist materials known as metal-oxo clusters were synthesized and lithographic characteristics were investigated. In particular, the dissolution behaviors of metal oxo clusters were investigated by development analyzer. Our results indicated that the solubility of metal oxo clusters thin films decreased by the exposure to KrF, ArF and electron beam (EB). We clarified the sensitivity in Ti-based oxo clusters was higher than that of Zr-based oxo clusters in both KrF and ArF exposure. The dissolution rate in two kinds of metal oxo cluters was almost same in both KrF and ArF exposure. Furthermore, the dissolution contrast of Ti-based oxo clusters was higher compared to Zr-based oxo clusters. Metal oxo clusters resists have the potential as future negative tone photoresist and EB resist materials.
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Hiroki Yamamoto and Yasunari Maekawa "Fundamental study on lithographic characteristics of metal oxo clusters for KrF, ArF, and electron beam lithography", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113261W (23 March 2020); https://doi.org/10.1117/12.2565717
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KEYWORDS
Silicon
Thin films
Electron beams
Scanning electron microscopy
Silicon films
Extreme ultraviolet
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