In-line Raman spectroscopy for stacked nanosheet device manufacturing

D. Schmidt; C. Durfee; J. Li; N. Loubet; A. Cepler; L. Neeman; N. Meir; J. Ofek; Y. Oren; D. Fishman

doi:10.1117/12.2582181

25 February 2021 In-line Raman spectroscopy for stacked nanosheet device manufacturing

D. Schmidt, C. Durfee, J. Li, N. Loubet, A. Cepler, L. Neeman, N. Meir, J. Ofek, Y. Oren, D. Fishman

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116111T (2021) https://doi.org/10.1117/12.2582181
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

In-line Raman spectroscopy for compositional and strain metrology throughout front-end-of-line manufacturing of next generation stacked gate-all-around nanosheet field-effect transistors is presented. Thin and alternating layers of fully strained pseudomorphic Si_(1-x)Ge_x and Si were grown epitaxially on a Si substrate and subsequently patterned. Intentional strain variations were introduced by changing the Ge content (x = 0.25, 0,35, 0.50). Polarization-dependent in-line Raman spectroscopy was employed to characterize and quantify the strain evolution of Si and Si_(1-x)Ge_x nanosheets throughout front-end-of-line processing by focusing on the analysis of Si-Si and Si-Ge optical phonon modes. To evaluate the accuracy of the Raman metrology results, strain reference data were acquired by non-destructive high-resolution x-ray diffraction and from destructive lattice deformation maps using precession electron diffraction. It was found that the germanium-alloy composition as well as Si and Si_(1-x)Ge_x strain obtained by Raman spectroscopy are in excellent agreement with reference metrology and follow trends of previously published simulations.

Conference Presentation

Citation Download Citation

D. Schmidt, C. Durfee, J. Li, N. Loubet, A. Cepler, L. Neeman, N. Meir, J. Ofek, Y. Oren, and D. Fishman "In-line Raman spectroscopy for stacked nanosheet device manufacturing", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116111T (25 February 2021); https://doi.org/10.1117/12.2582181

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