Dr. Noga Meir Profile

Dr. Noga Meir

at Nova Ltd

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 10 April 2024 Presentation + Paper

On-cell thickness monitoring of chalcogenide alloy layer using spectral interferometry, Raman spectroscopy, and hybrid machine learning

Hyunwoo Ryoo, Seul Ji Song, Min Ji Jeon, Juhyun Moon, JiHye Lee, ByungHyun Hwang, Jeongho Ahn, Yoon-jong Song, Hidong Kwak, Lior Neeman, Noga Meir, Jaehong Jang, Ik Hwan Kim, Hyunkyu Kim

Proceedings Volume 12955, 129550G (2024) https://doi.org/10.1117/12.3012496

KEYWORDS: Raman spectroscopy, Transmission electron microscopy, Interferometry, Semiconducting wafers, Signal intensity, Machine learning, Film thickness, Diffractive optical elements, Chalcogenides, Calibration

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Proceedings Article | 27 April 2023 Presentation + Paper

300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials

A. Moussa, J. Bogdanowicz, B. Groven, P. Morin, M. Beggiato, M. Saib, G. Santoro, Y. Abramovitz, K. Houtchens, S. Ben Nissim, N. Meir, J. Hung, A. Urbanowicz, R. Koret, I. Turovets, G. Lorusso, A.-L. Charley

Proceedings Volume 12496, 124961X (2023) https://doi.org/10.1117/12.2657968

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Monolayers, Scatterometry, 2D materials, Metrology, Atomic force microscopy, Raman spectroscopy, Silicon, Histograms

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SPIE Journal Paper | 27 January 2022 Open Access

In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing

Daniel Schmidt, Curtis Durfee, Juntao Li, Nicolas Loubet, Aron Cepler, Lior Neeman, Noga Meir, Jacob Ofek, Yonatan Oren, Daniel Fishman

JM3, Vol. 21, Issue 02, 021203, (January 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.021203

KEYWORDS: Silicon, Germanium, Raman spectroscopy, Optical lithography, Manufacturing, Semiconducting wafers, Polarization, Metrology, Raman scattering, Phonons

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Proceedings Article | 25 February 2021 Presentation + Paper

In-line Raman spectroscopy for stacked nanosheet device manufacturing

D. Schmidt, C. Durfee, J. Li, N. Loubet, A. Cepler, L. Neeman, N. Meir, J. Ofek, Y. Oren, D. Fishman

Proceedings Volume 11611, 116111T (2021) https://doi.org/10.1117/12.2582181

KEYWORDS: Raman spectroscopy, Manufacturing, Metrology, Optical lithography, X-ray diffraction, Silicon, Nondestructive evaluation, Germanium, Diffraction, Transistors

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