A high-throughput e-beam monitoring strategy was developed for capturing advanced DRAM storage node (SN) defects after etching process, when high-aspect-ratio (HAR) structure is involved. With this novel approach, two types of defects, SN-bowing-short and SN-open, were captured with solid signatures. In this study, two wafers with the same structure at different technology nodes,1A and 1B, were used. To enhance the defects signal, back scattered electron (BSE) mode was used to enhance the material contrast for the bottom of HAR holes. With improved BSE image quality, SN-bowing short type was caught using defect detection based on traditional array mode detection. SN-open, however, is more challenging because of its smaller dimension and HAR, resulting in an extremely narrow detection window of image gray level difference between normal storage node hole and the defective one. In order to capture this type of defect, an die-to-database (D2DB) comparison system for e-Beam inspection was applied to address this critical defect and its wafer signature was revealed with extremely high throughput and sensitivity.
|