Presentation + Paper
26 May 2022 Ultra-high throughput e-beam inspection for DRAM high aspect ratio storage node defect detection
Tsewen Huang, Shueming Chen, Kevin Hsiao, Steve Lin, Ray Fei, Yufei Duan, Kevin Gao, Luke Lin, Selena Chen
Author Affiliations +
Abstract
A high-throughput e-beam monitoring strategy was developed for capturing advanced DRAM storage node (SN) defects after etching process, when high-aspect-ratio (HAR) structure is involved. With this novel approach, two types of defects, SN-bowing-short and SN-open, were captured with solid signatures. In this study, two wafers with the same structure at different technology nodes,1A and 1B, were used. To enhance the defects signal, back scattered electron (BSE) mode was used to enhance the material contrast for the bottom of HAR holes. With improved BSE image quality, SN-bowing short type was caught using defect detection based on traditional array mode detection. SN-open, however, is more challenging because of its smaller dimension and HAR, resulting in an extremely narrow detection window of image gray level difference between normal storage node hole and the defective one. In order to capture this type of defect, an die-to-database (D2DB) comparison system for e-Beam inspection was applied to address this critical defect and its wafer signature was revealed with extremely high throughput and sensitivity.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsewen Huang, Shueming Chen, Kevin Hsiao, Steve Lin, Ray Fei, Yufei Duan, Kevin Gao, Luke Lin, and Selena Chen "Ultra-high throughput e-beam inspection for DRAM high aspect ratio storage node defect detection", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 120530J (26 May 2022); https://doi.org/10.1117/12.2617685
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KEYWORDS
Defect detection

Inspection

Data storage

Defect inspection

Scanning electron microscopy

Semiconducting wafers

Sensors

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