Full chip inverse lithography technology mask synthesis for advanced memory manufacturing

Jennefir Digaum; Gary Chiang; Lin Wang; Kyle Braam; Dave Gerold; Yongdong Wang; Thuc Dam

doi:10.1117/12.2657538

28 April 2023 Full chip inverse lithography technology mask synthesis for advanced memory manufacturing

Jennefir Digaum, Gary Chiang, Lin Wang, Kyle Braam, Dave Gerold, Yongdong Wang, Thuc Dam

Proceedings Volume 12495, DTCO and Computational Patterning II; 1249503 (2023) https://doi.org/10.1117/12.2657538
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

In advanced semiconductor memory manufacturing, the feature size keeps aggressively shrinking, creating problems in the fabrication process and leading to decreasing yield. Three key factors that can impact memory process and yield are lithographic process window, full field CD uniformity (CDU), and correction run time performance. In this paper, we describe and present a mask processing technique utilizing a) global array detect (GAD) for detecting and optimizing cell repetition, b) periodic boundary condition (PBC) for preserving simulation and mask symmetry, and c) cell-level ILT (CLILT) flow to process repeated cell regions and blend various design parts. With GAD + PBC + CL-ILT processing, we can achieve a perfectly consistent mask array region with enlarged process window and minimum local CD variation for a full field mask. Moreover, with fewer pattern units (called templates) to process, we can complete full chip ILT with reasonable time and compute resources compared to OPC full chip correction. In this paper, we show simulation and wafer print results including pattern fidelity, process window, mask consistency, and run time data.

Conference Presentation

Citation Download Citation

Jennefir Digaum, Gary Chiang, Lin Wang, Kyle Braam, Dave Gerold, Yongdong Wang, and Thuc Dam "Full chip inverse lithography technology mask synthesis for advanced memory manufacturing", Proc. SPIE 12495, DTCO and Computational Patterning II, 1249503 (28 April 2023); https://doi.org/10.1117/12.2657538

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available