Poster
30 April 2023 SEM overlay target design using e-beam simulation
Author Affiliations +
Conference Poster
Abstract
Current SEM target design methodology relies on knowledge and experience with previous designs. This experience-based method can break down in cases of significant architectural or material changes, requiring a “best guess” approach for a new target. Validation of this guess is only available once wafers are created and measured. Using electron interaction simulations in the target design process enables waferless evaluation of targets. Simulations can also identify the necessary imaging conditions to generate a high-quality SEM image, indicating the required tool conditions for successful metrology. The work in this paper demonstrates a correlation between simulation and results on wafers.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin Houchens, Yaniv Abramovitz, Shay Attal, Ofer Adan, Nahum Bomshtein, Itai Buks, Ryan Hsieh, Tal Itzkovich, and Jenny Perry "SEM overlay target design using e-beam simulation", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249623 (30 April 2023); https://doi.org/10.1117/12.2669984
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KEYWORDS
Overlay metrology

Scanning electron microscopy

Design and modelling

Metrology

Semiconducting wafers

Calibration

Design rules

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