Poster + Paper
5 October 2023 Validation of stable p-type phosphorus (P) doped ZnO thin films formation by investigating the photoresponse properties of P:ZnO/Ga2O3 heterojunctions
Archishman Saha, Madhuri Mishra, Rajib Saha, Avijit Dalal, Ankita Sengupta, Aniruddha Mondal, Sanatan Chattopadhyay, Subhananda Chakrabarti
Author Affiliations +
Conference Poster
Abstract
The formation of reproducible p-type conductivity in ZnO thin films is highly challenging now a days for the fabrication of several homo/heterojunction based fully transparent opto-electronic devices. In this study, p-type P: ZnO thin films are deposited by cost-effective SOD process and then intrinsically n-type Ga2O3 films are deposited on it to validate the p-type conductivity of ZnO by making vertical heterojunction with n-Ga2O3. The ZnO thin films are deposited by RF sputtering and subsequent P-doping is done by using the SOD technique on it. This involves proximity diffusing dopants into a spin-coated film by stacking the dopant source during thermal annealing at 800◦C for four hours in the furnace. Ga2O3 films are deposited on the P: ZnO films by using RF sputtering technique, for making the heterojunction. The electrical measurements are performed by using current-voltage (I-V) measurements under illuminated and dark conditions. The photo-switching and responsivity are also measured on the fabricated device. It is observed that the P: ZnO/Ga2O3 heterojunction exhibits the photoresponse in the dual wavelength region. The corresponding two peaks of responsivity are found around 200 nm and 390 nm with the values of 68.03 A/W and 7.93 A/W (at 5 V), respectively. Such two peaks originated due to the ultra-wide bandgaps of Ga2O3 (4.7eV) and P: ZnO (3.1 eV). Also, such heterojunction shows a rapid switching speed under white light at 5 V (rise time: 230 ms, fall time: 163 ms) and −5 V (rise time: 83 ms, Fall time: 169 ms), which is comparable with the other reported results. Therefore, the current study demonstrates the development of highly stable and reproducible p-type P: ZnO thin films by employing SOD technique and the validation of p-type formation by fabricating P: ZnO/Ga2O3 heterojunctions for dual-wavelength selector UV detector application and such detectors can be a potential candidate for various optoelectronic devices.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Archishman Saha, Madhuri Mishra, Rajib Saha, Avijit Dalal, Ankita Sengupta, Aniruddha Mondal, Sanatan Chattopadhyay, and Subhananda Chakrabarti "Validation of stable p-type phosphorus (P) doped ZnO thin films formation by investigating the photoresponse properties of P:ZnO/Ga2O3 heterojunctions", Proc. SPIE 12651, Low-Dimensional Materials and Devices 2023, 1265109 (5 October 2023); https://doi.org/10.1117/12.2677483
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Zinc oxide

Heterojunctions

Thin films

Switching

Gallium

Photodetectors

Electrical conductivity

Back to Top