An on-chip atomic layer deposited waveguide amplifier with net gain at C-band

Hao Zhang; Shengyun Zhu; Xiaoyan Zhou; Lin Zhang

doi:10.1117/12.2687603

28 November 2023 An on-chip atomic layer deposited waveguide amplifier with net gain at C-band

Hao Zhang, Shengyun Zhu, Xiaoyan Zhou, Lin Zhang

Proceedings Volume 12764, Optoelectronic Devices and Integration XII; 127640I (2023) https://doi.org/10.1117/12.2687603
Event: SPIE/COS Photonics Asia, 2023, Beijing, China

Abstract

Rare-earth-ion-doped materials provide many opportunities for on-chip amplifiers and light sources, which are important to silicon photonics. Here, we report an erbium-doped waveguide amplifier using atomic layer deposition. Method optimization yields erbium-doped Al2O3 films with excellent optical properties, which are showcased by the high-performance photoresist-erbium-doped Al2O3 hybrid amplifiers. We demonstrate signal enhancements (SE) of 30.4 dB and 16 dB at 1531.6 nm and 1550 nm in a 3.55-cm-long amplifier, respectively, corresponding to net gains of 8.4 dB and 5 dB. Furthermore, SE and gain increase with waveguide length under sufficient pumping, suggesting the potential for achieving greater gains for longer erbium-doped waveguide amplifiers. This work represents an important step towards high-gain rare-earth-ion-doped amplifiers and the integration of active devices on silicon platforms.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Hao Zhang, Shengyun Zhu, Xiaoyan Zhou, and Lin Zhang "An on-chip atomic layer deposited waveguide amplifier with net gain at C-band", Proc. SPIE 12764, Optoelectronic Devices and Integration XII, 127640I (28 November 2023); https://doi.org/10.1117/12.2687603

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