Sequence-defined polypeptoids as photoresists with molecular precision for EUV lithography

Chenyun Yuan; Erina Yoshida; Cameron Adams; Rachel A. Segalman; Christopher K. Ober

doi:10.1117/12.3011864

10 April 2024 Sequence-defined polypeptoids as photoresists with molecular precision for EUV lithography

Chenyun Yuan, Erina Yoshida, Cameron Adams, Rachel A. Segalman, Christopher K. Ober

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129570S (2024) https://doi.org/10.1117/12.3011864
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

As Moore’s Law intensifies the demand for higher transistor density, photoresists grapple with challenges posed by shorter wavelengths, especially in speed and stochastic factors. We aim to address these by molecularly optimizing photosensitive materials for precise control at molecular level. Our approach employs sequence-defined polypeptoids, specifically tailored to integrate metal atoms with high EUV absorption, improving both stochastic properties and photoresist sensitivity. Through the sub-monomer peptoid synthesis, we've crafted materials embedding acid-labile groups like tert-butyloxycarbonyl (tBOC) derivatives for solubility switch and 8-hydroxyquinoline derivatives for metal binding. Our in-depth study into peptoid structures and their metal atom positioning offers insights for future lithography techniques. Our ongoing efforts focus on refining these sequences and fine-tuning the exposure process, showcasing our commitment to advancing EUV lithography's capabilities.

Conference Presentation

Citation Download Citation

Chenyun Yuan, Erina Yoshida, Cameron Adams, Rachel A. Segalman, and Christopher K. Ober "Sequence-defined polypeptoids as photoresists with molecular precision for EUV lithography", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129570S (10 April 2024); https://doi.org/10.1117/12.3011864

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