Paper
8 June 2024 High-efficiency silicon modulator of horizontal S-shaped profile
Author Affiliations +
Proceedings Volume 13171, Third International Conference on Algorithms, Microchips, and Network Applications (AMNA 2024); 131710V (2024) https://doi.org/10.1117/12.3031892
Event: 3rd International Conference on Algorithms, Microchips and Network Applications (AMNA 2024), 2024, Jinan, China
Abstract
Silicon modulators, which play a crucial role in silicon photonics systems, are currently trending towards lower biases and improved bandwidth. The plasma dispersion effect of silicon modulators highlights the importance of carrier concentration in improving performance. Common doping profiles have been optimized for high efficiency but may suffer from increased loss. Our horizontal S-shaped modulator improves silicon modulators with excellent VπL of 0.77 V·cm and low loss of 10.9 dB/cm, with small resistance and capacitance enhancing bandwidth over 27 GHz. This design is suitable for high-speed and low-voltage applications with benefits of saving power.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Zijian Zhu, Yingxuan Zhao, and Fuwan Gan "High-efficiency silicon modulator of horizontal S-shaped profile", Proc. SPIE 13171, Third International Conference on Algorithms, Microchips, and Network Applications (AMNA 2024), 131710V (8 June 2024); https://doi.org/10.1117/12.3031892
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KEYWORDS
Design

Doping

Modulation

Modulators

Silicon

Capacitance

Electrooptic modulators

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