Study of silylation mechanisms and kinetics through variations in silylating agent and resin

T. Teresa Dao; Chris A. Spence; Dennis W. Hess

doi:10.1117/12.46377

1 June 1991 Study of silylation mechanisms and kinetics through variations in silylating agent and resin

T. Teresa Dao, Chris A. Spence, Dennis W. Hess

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46377
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A study using several silylating agents to incorporate silicon into phenolic resins is presented. Results obtained from the systematic variations of the silylating agent size and reactivity, the resin molecular weight, temperature, and pressure gave insights into the factors controlling the silylation process. The silylating agents used were: (1) hexamethyldisilazane (HMDS), (2) trimethylsilyldimetheylamine (TMSDMA), (3) trimethylsilyldiethylamine (TMSDEA), (4) dimethylsilyldiomethylamine (DMSDMA), (5) 1,1,4,4-tetramethyl-1,4- bis(N,N-dimethylamino)disiethylene (TMDDS), (6) 1,1,3,3,5,5- hexamethylcyclotrisilazane (1,1,3,3,5,5-HMCTS), (7) 1,2,3,4,5,6- hexamethylcyclotrisilazane (1,2,3,4,5,6-HMCTS). Poly(para- hydroxystyrene) resin was chosen instead of photoresist due to its well- defined chemistry and availability in different molecular weights. The silylation was monitored by Fourier Transform Infrared Spectroscopy (FTIR) analysis, which showed the amount of silicon chemically bound to the resin, and Quartz Crystal Microbalance (QCM) measurements, which indicated the total silicon uptake reacted and unreacted) in the resin at any given time. Issues involved in operating a QCM and in controlling silylaint agent degradation are also discussed.

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T. Teresa Dao, Chris A. Spence, and Dennis W. Hess "Study of silylation mechanisms and kinetics through variations in silylating agent and resin", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46377

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