In-situ electron spectroscopy studies of interaction between P and GaAs(100) surface

Xue Kun Lu; Xiaoyuan Hou; Xunmin Ding; Xun Wang

doi:10.1117/12.60439

1 July 1992 In-situ electron spectroscopy studies of interaction between P and GaAs(100) surface

Xue Kun Lu, Xiaoyuan Hou, Xunmin Ding, Xun Wang

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60439
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The interaction between P and GaAs(100) surface has been studied by XPS, UPS, HREELS and LEED. The results show that, at room temperature, P is adsorbed on the GaAs surface to form amorphous P thin film. There is less than one monolayer of P atoms bonded to the Ga atoms of the substrate at the interface. The amorphous P overlayer covered on the top of GaAs results in 0.2eV lowering of the GaAs surface barrier. The thermal annealing at 100°C-300°C will cause most of the amorphous P desorbed, with some randomly distributed P-clusters left on the surface. High temperature annealing will make all the remaining P atoms interact with the substrate to form Ga-P bonds. The exchange reaction between deposited P and the substrate will take place successively to form GaAsP thin film when P is deposited on GaAs substrate at higher temperatures. -This film is suggested to be a promising passivating film for GaAs surface.

Citation Download Citation

Xue Kun Lu, Xiaoyuan Hou, Xunmin Ding, and Xun Wang "In-situ electron spectroscopy studies of interaction between P and GaAs(100) surface", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60439

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