Low-temperature operating characteristics of 2.0-um strained InGaAs lasers

Ramon U. Martinelli; Raymond J. Menna; Gregory H. Olsen

doi:10.1117/12.176611

1 June 1994 Low-temperature operating characteristics of 2.0-um strained InGaAs lasers

Ramon U. Martinelli, Raymond J. Menna, Gregory H. Olsen

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176611
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Fabry-Perot and distributed-feedback emission from strained InGaAs/InP quantum well lasers has been examined over a temperature range of 100 K to 315 K. The active layer contains two 12 nm wide In_0.75Ga_0.25As quantum wells. Fabry-Perot lasers, operating at 39 degree(s)C, showed cw emission at 2.0 micrometers . A threshold current of 40 mA and an external differential quantum efficiency of 10% were measured from a laser with 6 mW of cw light output. A linear wavelength tuning rate of 0.72 nm/K was measured from 100 K to 300 K. The characteristic temperature, T_o, of the threshold current, exhibits an abrupt decrease at 250 K, from T_o equals 136 K to T_o equals 56 K. A similar decrease in the characteristic temperature of the external differential quantum efficiency is observed. The decrease in T_o values at 250 K indicates the onset of an additional loss mechanism. Distributed feedback lasers were fabricated from the same wafer. They showed single mode output from 190 to 300 K with a side-mode-suppression ratio of about 20 dB. The wavelength was 1.95 micrometers at 0 degree(s)C and tuned at a rate of 0.13 nm/K. The current-tuning rate was -340 MHz/mA.

Citation Download Citation

Ramon U. Martinelli, Raymond J. Menna, and Gregory H. Olsen "Low-temperature operating characteristics of 2.0-um strained InGaAs lasers", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176611

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