Fluorescent light source (FLS) with low-temperature poly-Si TFT driver

Ken-ichi Nakamura; Hideki Asada; Toshiyuki Akiyama; Kenji Sera; Hiroshi Tanabe; Fujio Okumura; Ken Ito; Hiroyuki Nakajima; Hiroshi Saeki

doi:10.1117/12.175290

9 May 1994 Fluorescent light source (FLS) with low-temperature poly-Si TFT driver

Ken-ichi Nakamura, Hideki Asada, Toshiyuki Akiyama, Kenji Sera, Hiroshi Tanabe, Fujio Okumura, Ken Ito, Hiroyuki Nakajima, Hiroshi Saeki

Author Affiliations +

Proceedings Volume 2171, Color Hard Copy and Graphic Arts III; (1994) https://doi.org/10.1117/12.175290
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States

Abstract

A fluorescent light source (FLS) addressed by a CMOS polysilicon thin-film transistor (poly-Si TFT) driver has been fabricated for the first time. The FLS has 800 pixels with a 200 dpi resolution. 5000 fL brightness has been achieved with only 40 V driving voltage because of driving each pixel in static mode. The FLS feasibility has been confirmed by a print head utilized the FLS. The poly-Si TFT driver has been fabricated by a low-temperature process under 600 degree(s)C, utilizing excimer-laser annealing. This enables the use of low-cost glass substrates and allows integrating the driver within the FLS. Therefore, this technology presents compact and low-cost print heads.

Citation Download Citation

Ken-ichi Nakamura, Hideki Asada, Toshiyuki Akiyama, Kenji Sera, Hiroshi Tanabe, Fujio Okumura, Ken Ito, Hiroyuki Nakajima, and Hiroshi Saeki "Fluorescent light source (FLS) with low-temperature poly-Si TFT driver", Proc. SPIE 2171, Color Hard Copy and Graphic Arts III, (9 May 1994); https://doi.org/10.1117/12.175290

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