Enhanced lumped parameter model for photolithography

Chris A. Mack

doi:10.1117/12.175444

17 May 1994 Enhanced lumped parameter model for photolithography

Chris A. Mack

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175444
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Enhancements to the lumped parameter model for semiconductor optical lithography are introduced. These enhancements allow the lumped parameter to calculate resist sidewall angle as well as resist linewidth in an approximate but extremely fast manner. The model shows the two main contributors to resist slope: development effects due to the time required for the developer to reach the bottom of the photoresist, and absorption effects resulting in a reduced exposure at the bottom of the resist.

Citation Download Citation

Chris A. Mack "Enhanced lumped parameter model for photolithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175444

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