Ex-situ and in-situ probing of Column IV interfaces using optical second harmonic generation

Jerry I. Dadap Jr.; N. M. Russell; X. F. Hu; John G. Ekerdt; Michael C. Downer; Bruce Doris; John K. Lowell; Alain C. Diebold

doi:10.1117/12.186652

14 September 1994 Ex-situ and in-situ probing of Column IV interfaces using optical second harmonic generation

Jerry I. Dadap Jr., N. M. Russell, X. F. Hu, John G. Ekerdt, Michael C. Downer, Bruce Doris, John K. Lowell, Alain C. Diebold

Author Affiliations +

Proceedings Volume 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing; (1994) https://doi.org/10.1117/12.186652
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Using femtosecond pulses from a Kerr-lens Mode-Locked Ti:Sapphire laser to generate second harmonic from a series of native-oxidized Si(001)/SiO₂ samples prepared with systematically varied etch- induced interfacial microroughness, we demonstrate rapid, noncontact, noninvasive measurement of Angstrom-level Si(001)/SiO₂ interface roughness. These measurements were performed in air and correlated with atomic force microscopy (AFM) measurements. We also demonstrate in-situ second harmonic monitoring of Si epitaxy in two growth regimes: high temperature (approximately equals 925 K) ultra high-vacuum chemical vapor deposition (UHV-CVD) growth mode and a cyclic atomic layer epitaxy (ALE) growth mode. During UHV-CVD growth of Si on ALE-grown Si_0.9Ge_0.1(001), we observed interference of the second harmonic signals between the growing Si surface and the buried Si_0.9Ge_0.1(001) interface. In the ALE growth mode, we monitored several key stages during a full cycle of growth of a partial (approximately equals 0.42) Si monolayer on Si(001) from a disilane (Si₂H₆) precursor.

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Jerry I. Dadap Jr., N. M. Russell, X. F. Hu, John G. Ekerdt, Michael C. Downer, Bruce Doris, John K. Lowell, and Alain C. Diebold "Ex-situ and in-situ probing of Column IV interfaces using optical second harmonic generation", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); https://doi.org/10.1117/12.186652

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