Paper
3 July 1995 Printability of laser mask repairs at deep UV
James A. Reynolds, Franklin M. Schellenberg
Author Affiliations +
Abstract
Over 50% of today's 5X reticles require some sort of repair to meet the zero defect criteria. A successful repair must remove materials so the aerial image of the defective site is identical to that of a nondefective site within the tolerance required by the printing process. Shorter printing wavelengths increase sensitivity to surface roughness and deposited film. In this study, two different laser repair techniques were used to remove selected defects from a standard KLA defect printability reticle and the reticle was printed onto wafers at 248 nm. An atomic force microscope (AFM), aerial image measurement system (AIMS) and scanning electron microscope (SEM) were used to evaluate the reticle and wafer sites.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. Reynolds and Franklin M. Schellenberg "Printability of laser mask repairs at deep UV", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212794
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CITATIONS
Cited by 2 patents.
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KEYWORDS
Semiconducting wafers

Photomasks

Reticles

Scanning electron microscopy

Printing

Atomic force microscopy

Deep ultraviolet

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