Paper
24 July 1996 DUV printability of laser repairs on binary and attenuated phase-shift masks
James A. Reynolds, Franklin M. Schellenberg, Michael S. Hibbs, Dennis Hayden
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Abstract
Photomask repair is a key technology required for the advancement of semiconductor lithography. Of particular interest is the repair of attenuated phase shift masks (APSM) which appear to have a significant role in extending the life of lithographic equipment and processes. A majority of today's 5X reticles require some type of repair to meet zero defect requirements. A successful repair must add and/or remove materials so the aerial image of the defective site looks, to the printing process, to be identical to that of a nondefective site. In this study, selected defects from an IBM test pattern were removed from a carbon attenuated phase shift mask ("carbon phase mask”) and a conventional binary mask (“chromeonglass mask"). The mask was inspected using an atomic force microscope (AFM) and an aerial image measurement (AIMS) system and were printed at a 248nm wavelength onto silicon wafers. The finished wafers were inspected using a scanning electron microscope (SEM) to determine the printability of repaired sites.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. Reynolds, Franklin M. Schellenberg, Michael S. Hibbs, and Dennis Hayden "DUV printability of laser repairs on binary and attenuated phase-shift masks", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245225
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Carbon

Semiconducting wafers

Reticles

Atomic force microscopy

Binary data

Inspection

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