Influence of the TiNx/TiSy/poly-Si gate preparation process on MOS-structure properties and reliability

Victor M. Ivkin; Valentin V. Baranov

doi:10.1117/12.221129

15 September 1995 Influence of the TiN_x/TiS_y/poly-Si gate preparation process on MOS-structure properties and reliability

Victor M. Ivkin, Valentin V. Baranov

Author Affiliations +

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221129
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

The behavior of the MOS-structure composed of TiN_x/TiSi_y upper layer, 3500 angstrom thick LPCVD poly-Si layer, 200-300 angstrom thick thermal oxide grown on p-Si substrate were studied at various conditions of the fabrication process. The TiN_x/TiSi_y layer was formed by rapid thermal annealing (RTA) of the 200 angstrom thick titanium film previously sputter deposited on the poly-Si in nitrogen contained ambient. Samples with different compositions were obtained by varying the nitrogen content between 0% and 25% in Ar + N₂ mixture. Cross-section transmission electron microscopy (TEM) investigation show the silicide/poly-Si interface roughness appears to be smaller when nitrogen content increases in the Ar + N₂ working gas. TEM studies of the surface morphology reveal adding of nitrogen to the working gas yield a decrease in grain size of the film up to two-tree times if it reaches an upper limit. Measurements of sheet resistance of the titanium silicide/nitride layer displays these observations. In order to check how the process of formation of the upper layer influences the MOS-structure performances electrophysical measurements were taken. They show a decrease of instability of the work function ((Phi) _ms) values as well as negligible rize of interface state density when sintering of the silicide layer is carried out in nitrogen contained ambient. Fowler-Nordheim electron injection experiments demonstrate some increase of defects density in oxide at heat treatment at higher temperatures.

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Victor M. Ivkin and Valentin V. Baranov "Influence of the TiN_x/TiS_y/poly-Si gate preparation process on MOS-structure properties and reliability", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221129

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KEYWORDS

Titanium

Nitrogen

Interfaces

Oxides

Silicon

Resistance

Annealing

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