The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si

M. N. Solovan; V. V. Brus; P. D. Maryanchuk

doi:10.1117/12.2048631

17 December 2013 The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Author Affiliations +

Proceedings Volume 9066, Eleventh International Conference on Correlation Optics; 906614 (2013) https://doi.org/10.1117/12.2048631
Event: Eleventh International Conference on Correlation Optics, 2013, Chernivsti, Ukraine

Abstract

We report the results of the investigation of electrical properties of photosensitive anisotype heterojunctions n- TiN/p-Si with different conditions of Si surface treatments. The analysis of the measured I-V characteristics of the heterojunctions under dark conditions has shown that values of the height of the potential barrier and series resistance decreases with the decrease of the thickness of native oxide. The dominating tunnel-recombination mechanism of current transport through the heterojunctions under investigation was determined to be independent on the conditions of surface treatment. We have established that the n-TiN/p-Si heterojunction oxidized in bidistilled water at 70ºC for 30 s possesses the lowest density of interface states and, thus lowest surface recombination velocity.

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M. N. Solovan, V. V. Brus, and P. D. Maryanchuk "The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si", Proc. SPIE 9066, Eleventh International Conference on Correlation Optics, 906614 (17 December 2013); https://doi.org/10.1117/12.2048631

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