Mask fabrication rules for proximity-corrected patterns

Michael L. Rieger; John P. Stirniman

doi:10.1117/12.262815

27 December 1996 Mask fabrication rules for proximity-corrected patterns

Michael L. Rieger, John P. Stirniman

Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262815
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

Optical proximity correction (OPC) adds complex convolutions to mask pattern shapes which can stress mask-making capabilities. Because the `decorations'--jogs, serifs, assist features--created by proximity correction are approximations to `ideal' corrected shapes there are many variations of corrected mask shapes that provide the same result on the wafer. With an understanding of specific mask- making limitations it is possible to leverage this leeway to create more `mask friendly' patterns with OPC.

Citation Download Citation

Michael L. Rieger and John P. Stirniman "Mask fabrication rules for proximity-corrected patterns", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262815

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