Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures

J. J. Wiczer; L. R. Dawson; G. C. Osbourn; C. E. Barnes

doi:10.1117/12.932434

22 January 1982 Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures

J. J. Wiczer, L. R. Dawson, G. C. Osbourn, C. E. Barnes

Proceedings Volume 0296, Fiber Optics in Adverse Environments I; (1982) https://doi.org/10.1117/12.932434
Event: 25th Annual Technical Symposium, 1981, San Diego, United States

Abstract

This paper reports on photodiode structures designed and fabricated to reduce unwanted ionizing-radiation induced noise currents without significantly reducing the optical sig-nal currents. For the optical wavelength range from 0.7 µm to 1.4 μm, we have studied three types of photodiode structures fabricated from GaAlAs/GaAs, GaAlSb, and InGaAsP compound semiconductor materials. In addition, we compare the results of testing these specially designed direct bandgap photodiodes with commercially available direct and indirect hand qap photodiodes in an ionizing-radiation environment.

Citation Download Citation

J. J. Wiczer, L. R. Dawson, G. C. Osbourn, and C. E. Barnes "Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures", Proc. SPIE 0296, Fiber Optics in Adverse Environments I, (22 January 1982); https://doi.org/10.1117/12.932434

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