Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime

Graham G. Arthur; Brian Martin; Chris A. Mack

doi:10.1117/12.275818

7 July 1997 Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime

Graham G. Arthur, Brian Martin, Chris A. Mack

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275818
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Methods used in the extraction of lithographic modeling parameters for simulation packages such as PROLITH/2 are examined. The results reveal hitherto unconsidered aspects of the development process which, when implemented in the simulations, give improved agreement with practical results with regard to characteristics such as resolution, depth-of- focus, linearity and dense/isolated bias. These refinements, which are particularly influential in the sub-half-micron regime, include the variation in photoresist dissolution properties as a function of depth into the resist film and also a small but powerful development 'notch' which is observed in the development rate versus PAC concentration curve as it approaches the minimum dissolution rate. This work therefore shows that current development models may not be adequate for some applications, and that great care must be taken in deriving and using the correct set of parameters for any one situation.

Citation Download Citation

Graham G. Arthur, Brian Martin, and Chris A. Mack "Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275818

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