Comparison of different optical proximity correction models with three-dimensional photolithography simulation over planar substrates

Juan C. Rey; Jiangwei Li; Victor V. Boksha; Douglas A. Bernard

doi:10.1117/12.280553

14 August 1997 Comparison of different optical proximity correction models with three-dimensional photolithography simulation over planar substrates

Juan C. Rey, Jiangwei Li, Victor V. Boksha, Douglas A. Bernard

Author Affiliations +

Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280553
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

Different models for model-based Optical Proximity Correction have been recently developed for improving the printability of IC designs. Each model has its own area of application and it can be verified by experiments or by using a calibrated photoresist simulator that can predict 3D shapes with enough accuracy and acceptable performance. In this work we describe the use of 3D photoresist simulation for exposure, post-exposure bake and development on planar substrates to study the characteristics of different models for model-based OPC. We also introduce a new OPC tool that it is based on an automated procedure for layout modification and fast 3D simulation of exposure, PEB and development.

Citation Download Citation

Juan C. Rey, Jiangwei Li, Victor V. Boksha, and Douglas A. Bernard "Comparison of different optical proximity correction models with three-dimensional photolithography simulation over planar substrates", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280553

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