Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists

Will Conley; Carl P. Babcock; Nigel R. Farrar; Hua-Yu Liu; Bill Peterson; Kazuo Taira

doi:10.1117/12.312425

29 June 1998 Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists

Will Conley, Carl P. Babcock, Nigel R. Farrar, Hua-Yu Liu, Bill Peterson, Kazuo Taira

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312425
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A major factor in the substantial improvement in the performance and environmental stability of DUV chemical amplified resists involved a change in the chemistry of the protecting group. A divergence of resist design has recently occurred, leading to two completely different resist classes, each with its promises and problems. These new resists (once again based on hydroxystyrene copolymers and terpolymers) can be grouped by activation energy. In this paper the authors will attempt to answer these questions and perhaps highlight areas of additional concern. Results from our investigations of two photoresists of either high or low activation energy system will be presented. Critical parameters such as overall process windows for sub-200 nm lithography variation with PEB temperature (linewidth/ degree(s)C), PEB delay, line slimming, etch rates and bottle stability will be discussed.

Citation Download Citation

Will Conley, Carl P. Babcock, Nigel R. Farrar, Hua-Yu Liu, Bill Peterson, and Kazuo Taira "Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312425

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