Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists

Qingshang Jason Niu; Jean M. J. Frechet; Uzodinma Okoroanyanwu; Jeff D. Byers; C. Grant Willson

doi:10.1117/12.275888

7 July 1997 Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists

Qingshang Jason Niu, Jean M. J. Frechet, Uzodinma Okoroanyanwu, Jeff D. Byers, C. Grant Willson

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275888
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

We have designed and synthesized a series of novel non-acrylic nortricyclene polymer and copolymers containing various structural units for use in both 193 and 248 nm lithography. These polymers and copolymers are prepared using a free- radical cyclopolymerization process that is very versatile and allows use of a great variety of comonomers. The resulting materials exhibit outstanding dry-etch resistance, good adhesion to silicon, good transparency at 193 nm and, unlike many poly(norbornenes), they are not contaminated by metal catalysts. In preliminary 193 nm testing a resist formulated with a suitable photoacid generator afforded alkali-developed positive-tone images with sub-0.15 micrometer L/S resolution. Although a large array of copolymers are possible due to the ease with which the free-radical copolymerization reaction proceeds, copolymers based exclusively on functionalized norbornadiene and maleic anhydride-derived components have shown great promise. In particular, it is possible to tune their properties through simple variations in structure and composition.

Citation Download Citation

Qingshang Jason Niu, Jean M. J. Frechet, Uzodinma Okoroanyanwu, Jeff D. Byers, and C. Grant Willson "Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275888

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