Material design and lithographic performance of novel hydroxystyrene copolymer-based DUV negative resists

Takanori Kudo; Kayo Aramaki; Seiya Masuda; Georg Pawlowski

doi:10.1117/12.312453

29 June 1998 Material design and lithographic performance of novel hydroxystyrene-copolymer-based DUV negative resists

Takanori Kudo, Kayo Aramaki, Seiya Masuda, Georg Pawlowski

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312453
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The development of a negative tone chemically amplified DUV resist consisting of a hydroxystyrene based copolymer, a melamine crosslinker, a photoacid generator (PAG) and certain amine additives is described. A response surface method was employed to investigate the general trends of formulation and process changes on the lithographic performance. Microbridging was eliminated by either increasing the PAG concentration or the application of lower prebake temperatures. The pattern profiles were optimized by the selection of a specific amine/ammonium hydroxide combination; the effects of individual amine components are discussed and a correlation with their structures is given. The application of monodisperse polymer materials generally improved the pattern edge accuracy. The optimized resist material has a resolution potential below 0.15 micrometers (NA equals 0.55) combined with a large depth of focus (> 1.0 micrometers 0.15 micrometers iso lines), acceptable iso-dense bias, and small sensitivity towards changes in the post exposure bake conditions.

Citation Download Citation

Takanori Kudo, Kayo Aramaki, Seiya Masuda, and Georg Pawlowski "Material design and lithographic performance of novel hydroxystyrene-copolymer-based DUV negative resists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312453

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