Paper
3 September 1998 Multivariate run-to-run control of arm-to-arm variations in chemical mechanical planarization
W. Jarrett Campbell, Chris Raeder, Valerie Wenner, Thomas F. Edgar
Author Affiliations +
Abstract
With the introduction of high-throughput, multi-arm chemical-mechanical planarization (CMP) tools, a new source of process variation is introduced to the CMP process. These arm-to-arm variations are caused by small differences in the polishing rates of each arm. Modeling the arm-to-arm interactions of a CMP tool allows the application of a model-based, multi-variable, run-to-run control scheme. This control scheme is an optimization-based approach using pilot wafers applied to 'out of control' processes.In addition, this paper outlines a controller that can be applied directly to production wafers. The production-based run-to- run controller allows for monitoring the process through statistical process control methods and utilizes known relationships between product and pilot wafer removal rates in order to keep the process 'in control'. The product-based controller will be automated and deployed in AMD's Fab25- micron facility in Austin, TX using the software developed under the Advanced Control Framework Initiative.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Jarrett Campbell, Chris Raeder, Valerie Wenner, and Thomas F. Edgar "Multivariate run-to-run control of arm-to-arm variations in chemical mechanical planarization", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324360
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Cited by 1 scholarly publication.
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KEYWORDS
Chemical mechanical planarization

Process control

Semiconducting wafers

Model-based design

Software development

Polishing

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