Analysis technique for quantifying the effectiveness of optical-proximity-corrected photomasks and its application to defect printability

Graham G. Arthur; Brian Martin

doi:10.1117/12.346895

28 April 1999 Analysis technique for quantifying the effectiveness of optical-proximity-corrected photomasks and its application to defect printability

Graham G. Arthur, Brian Martin

Author Affiliations +

Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346895
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

An analysis technique for quantifying the effectiveness of optical proximity corrected (OPC) photomasks is described. The methodology is able to account for reticle manufacturing tolerances and has a number of applications including the optimization of OPC features and, in the examples described, the analysis of defect printability. The results presented here are generated using aerial image measurements from PROLITH/2, but the technique can be directly transferred to resist image measurements using 3D simulation tools such as PROLITH/3D where other factors such as swing curve effects caused by wafer topography could also be analyzed. With inspection tools such as scanning electron or atomic force microscopes and appropriate image processing and analysis software it should also be possible to apply this methodology to practical results.

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Graham G. Arthur and Brian Martin "Analysis technique for quantifying the effectiveness of optical-proximity-corrected photomasks and its application to defect printability", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346895

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