Novel x-ray and gamma-ray drift detectors based on silicon and compound semiconductors

Jan S. Iwanczyk; Bradley E. Patt; Carolyn R. Tull; Lawrence R. MacDonald

doi:10.1117/12.366589

19 October 1999 Novel x-ray and gamma-ray drift detectors based on silicon and compound semiconductors

Jan S. Iwanczyk, Bradley E. Patt, Carolyn R. Tull, Lawrence R. MacDonald

Proceedings Volume 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics; (1999) https://doi.org/10.1117/12.366589
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Large area silicon drift detectors (SDD) with areas up to approximately 1 cm² have been fabricated for x-rays. Recent novel designs have produced very low dark current, high electric field, and hence low noise and good charge collection. The developed structures were evaluated with low noise input amplification electronic components on Peltier coolers so that the temperature could be adjusted. Energy resolution of 143 eV FWHM at 5.9 keV was measured with a 50 mm² SDD whose corresponding noise level was 70 eV FWHM.

Citation Download Citation

Jan S. Iwanczyk, Bradley E. Patt, Carolyn R. Tull, and Lawrence R. MacDonald "Novel x-ray and gamma-ray drift detectors based on silicon and compound semiconductors", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366589

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