Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material

Arie Ruzin; Maurice Glaser; Francois Lemeilleur

doi:10.1117/12.366608

19 October 1999 Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material

Arie Ruzin, Maurice Glaser, Francois Lemeilleur

Proceedings Volume 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics; (1999) https://doi.org/10.1117/12.366608
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Recent results on the radiation hardness of silicon detectors fabricated on gloat zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 collaboration, which is studying the radiation hardening of silicon detectors.

Citation Download Citation

Arie Ruzin, Maurice Glaser, and Francois Lemeilleur "Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366608

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